The major research work and results are as follows: ⅰ. Firstly, correlation between buffer leakage current and different nucleation layers of AlGaN/ GaN heterostructure have been analyzed by comparing depletion capacitance of C-V characteristics in GaN-based heterostructures. 主要的工作和成果如下:1、通过对不同成核层GaN基异质结材料C-V特性的比较分析,得出了AlGaN/GaN异质结中GaN缓冲层漏电与成核层的关系。
Meanwhile, a light-doped n-type buffer layer under the gate reduces the depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. 另一方面,在栅极下面引入的轻掺杂N型缓冲层降低了扩展在导电沟道中的耗尽层,从而提高了输出电流Ids并减小了栅电容Cg。